Indirect Electron Tunneling
نویسنده
چکیده
Indirect electron tunneling is observed in germanium diodes by detecting small perturbations in their I-V characteristics at low temperatures that occur when the applied potential equals the energy of emitted phonons. Frequencies of the observed phonons are calculated to a comparable degree of accuracy (±0.3E12 Hz) with neutron scattering data. Electronic differentiation, used to closely inspect changes in the diodes’ I-V curves, is compared with numerical differentiation using both a cubic spline method and a least squares fit to a high order polynomial.
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